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APTGT35X120BTP3 IGBT Transistor

The APTGT35X120BTP3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGT35X120BTP3 transistor as follows.

Circuit diagram symbol of the APTGT35X120BTP3 transistor

APTGT35X120BTP3 Transistor Specification

Transistor Code APTGT35X120BTP3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package
Collector Power Dissipation (Maximum) Pc 160W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC

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