IXGP16N60B2D1 IGBT Transistor

The IXGP16N60B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGP16N60B2D1 transistor as follows.

IXGP16N60B2D1 Transistor Specification

Transistor Code		IXGP16N60B2D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	40A
Rise Time		70

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