IXGN200N60 IGBT Transistor

The IXGN200N60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGN200N60 transistor as follows.

IXGN200N60 Transistor Specification

Transistor Code		IXGN200N60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOTOP
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		2.5

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