IXGH30N30S IGBT Transistor

The IXGH30N30S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH30N30S transistor as follows.

IXGH30N30S Transistor Specification

Transistor Code		IXGH30N30S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247SMD
Collector Power Dissipation (Maximum)	Pc	200VW
Collector-Emitter Voltage (Maximum)	VCE	300V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		2500pF
Rise Time		25

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