GM200HB12CT IGBT Transistor

The GM200HB12CT is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GM200HB12CT transistor as follows.

GM200HB12CT Transistor Specification

Transistor Code		GM200HB12CT
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	260A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		760000pF
Rise Time		50

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