IRG7IC30FD IGBT Transistor

The IRG7IC30FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7IC30FD transistor as follows.

IRG7IC30FD Transistor Specification

Transistor Code		IRG7IC30FD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220F
Collector Power Dissipation (Maximum)	Pc	42W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		130
Rise Time		36

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