IXGH22N50BU1 IGBT Transistor

The IXGH22N50BU1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH22N50BU1 transistor as follows.

IXGH22N50BU1 Transistor Specification

Transistor Code		IXGH22N50BU1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	500V
Collector Current (Maximum)	IC	44A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		55

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