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HGTG18N120BND IGBT Transistor

The HGTG18N120BND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTG18N120BND transistor as follows.

Circuit diagram symbol of the HGTG18N120BND transistor

HGTG18N120BND Transistor Specification

Transistor Code HGTG18N120BND
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 54A
Operating Junction Temperature (Maximum) 150 oC

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