GT15J101 IGBT Transistor

The GT15J101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT15J101 transistor as follows.

GT15J101 Transistor Specification

Transistor Code		GT15J101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TOP3
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1100pF
Rise Time		600

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