IRGP4760 IGBT Transistor

The IRGP4760 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRGP4760 transistor as follows.

IRGP4760 Transistor Specification

Transistor Code		IRGP4760
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	325W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		150
Rise Time		60

UXPython is not the creator or an official representative of the IRGP4760 IGBT transistor. You can download the official IRGP4760 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

VS-GB400AH120U IGBT Transistor STGP8NC60KD IGBT Transistor SGH20N120RUFD IGBT Transistor STGW80V60F IGBT Transistor IXSH30N60CD1 IGBT Transistor STGB20NC60V IGBT Transistor APTLGF210U120T IGBT Transistor STGP20H60DF IGBT Transistor SGS23N60UFD IGBT Transistor KP731A IGBT Transistor IRG4RC10UD IGBT Transistor IXST30N60C IGBT Transistor SKM150GAL12V IGBT Transistor STGB8NC60KD IGBT Transistor SGP6N60UF IGBT Transistor HGT1Y40N60A4D IGBT Transistor HGT1S3N60B3S IGBT Transistor VS-GB50YF120N IGBT Transistor SM2G100US120 IGBT Transistor DM2G200SH12AE IGBT Transistor