IRG7S313U IGBT Transistor

The IRG7S313U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7S313U transistor as follows.

IRG7S313U Transistor Specification

Transistor Code		IRG7S313U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK
Collector Power Dissipation (Maximum)	Pc	78W
Collector-Emitter Voltage (Maximum)	VCE	330V
Collector-Emitter Saturation Voltage	VCE(on)	1.45V
Collector Current (Maximum)	IC	40A

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