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IKW40N65H5A IGBT Transistor

The IKW40N65H5A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IKW40N65H5A transistor as follows.

Circuit diagram symbol of the IKW40N65H5A transistor

IKW40N65H5A Transistor Specification

Transistor Code IKW40N65H5A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 250W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.66V
Collector Current (Maximum) IC 74A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 43
Rise Time 11

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