IRG7PH50K10D IGBT Transistor

The IRG7PH50K10D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG7PH50K10D transistor as follows.

IRG7PH50K10D Transistor Specification

Transistor Code		IRG7PH50K10D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	400W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	90A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		190
Rise Time		60

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