IRG4IBC20FD IGBT Transistor

The IRG4IBC20FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IRG4IBC20FD transistor as follows.

IRG4IBC20FD Transistor Specification

Transistor Code		IRG4IBC20FD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO220
Collector Power Dissipation (Maximum)	Pc	34W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.50V
Collector Current (Maximum)	IC	7.7A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		540pF

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