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STGW35HF60WDI IGBT Transistor

The STGW35HF60WDI is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW35HF60WDI transistor as follows.

Circuit diagram symbol of the STGW35HF60WDI transistor

STGW35HF60WDI Transistor Specification

Transistor Code STGW35HF60WDI
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247_TO247_LONG_LEA
Collector Power Dissipation (Maximum) Pc 260W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.65V
Collector Current (Maximum) IC 20A

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