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IQGB400N60I4 IGBT Transistor

The IQGB400N60I4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IQGB400N60I4 transistor as follows.

Circuit diagram symbol of the IQGB400N60I4 transistor

IQGB400N60I4 Transistor Specification

Transistor Code IQGB400N60I4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 400A
Operating Junction Temperature (Maximum) 175 oC
Rise Time 124

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