KGF20N60PA IGBT Transistor

The KGF20N60PA is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the KGF20N60PA transistor as follows.

KGF20N60PA Transistor Specification

Transistor Code		KGF20N60PA
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	156W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		20

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