IGC31T65QE IGBT Transistor

The IGC31T65QE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IGC31T65QE transistor as follows.

IGC31T65QE Transistor Specification

Transistor Code		IGC31T65QE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		CHIP
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.22V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC

UXPython is not the creator or an official representative of the IGC31T65QE IGBT transistor. You can download the official IGC31T65QE IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APT15GP60BDF1 IGBT Transistor IRGSL6B60K IGBT Transistor SGF23N60UF IGBT Transistor RJH1CM6DPQ-E0 IGBT Transistor AP20GT60P-HF IGBT Transistor IXGP15N120B IGBT Transistor STGP10NC60S IGBT Transistor IHW30N160R2 IGBT Transistor IXGR50N160H1 IGBT Transistor MMG400K120U6TN IGBT Transistor T0850VB25E IGBT Transistor SG25S12T IGBT Transistor HGTG40N60C3R IGBT Transistor MUBW15-06A7 IGBT Transistor BSM100GB120DLC IGBT Transistor IXGA12N100AU1 IGBT Transistor APT30GN60BDQ2G IGBT Transistor STGW45NC60VD IGBT Transistor IXYP30N65C3 IGBT Transistor F3L300R12ME4_B22 IGBT Transistor