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NGTB75N60SWG IGBT Transistor

The NGTB75N60SWG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGTB75N60SWG transistor as follows.

Circuit diagram symbol of the NGTB75N60SWG transistor

NGTB75N60SWG Transistor Specification

Transistor Code NGTB75N60SWG
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 265W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 300
Rise Time 48

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