APT150GN60LDQ4G IGBT Transistor

The APT150GN60LDQ4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT150GN60LDQ4G transistor as follows.

APT150GN60LDQ4G Transistor Specification

Transistor Code		APT150GN60LDQ4G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	536W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.65V
Collector Current (Maximum)	IC	123A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		350
Rise Time		110

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