GT25G102 IGBT Transistor

The GT25G102 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT25G102 transistor as follows.

GT25G102 Transistor Specification

Transistor Code		GT25G102
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		IPAK
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	12V
Collector-Emitter Saturation Voltage	VCE(on)	8V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC

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