STGD3NB60SD IGBT Transistor

The STGD3NB60SD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGD3NB60SD transistor as follows.

STGD3NB60SD Transistor Specification

Transistor Code		STGD3NB60SD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK
Collector Power Dissipation (Maximum)	Pc	48W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.1V
Collector Current (Maximum)	IC	7A

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