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IXGM17N100 IGBT Transistor

The IXGM17N100 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGM17N100 transistor as follows.

Circuit diagram symbol of the IXGM17N100 transistor

IXGM17N100 Transistor Specification

Transistor Code IXGM17N100
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO204
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector Current (Maximum) IC 34A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 3.5

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