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FGW30N60VD(30G60VD) IGBT Transistor

The FGW30N60VD(30G60VD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW30N60VD(30G60VD) transistor as follows.

Circuit diagram symbol of the FGW30N60VD(30G60VD) transistor

FGW30N60VD(30G60VD) Transistor Specification

Transistor Code FGW30N60VD(30G60VD)
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 230W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.6V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 145
Rise Time 60

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