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FB15R06W1E3 IGBT Transistor

The FB15R06W1E3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FB15R06W1E3 transistor as follows.

Circuit diagram symbol of the FB15R06W1E3 transistor

FB15R06W1E3 Transistor Specification

Transistor Code FB15R06W1E3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 81W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.55V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 11

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