APTGS50X170E2 IGBT Transistor

The APTGS50X170E2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APTGS50X170E2 transistor as follows.

APTGS50X170E2 Transistor Specification

Transistor Code		APTGS50X170E2
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package
Collector Power Dissipation (Maximum)	Pc	350W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC

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