APT30GP60JDF1 IGBT Transistor

The APT30GP60JDF1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT30GP60JDF1 transistor as follows.

APT30GP60JDF1 Transistor Specification

Transistor Code		APT30GP60JDF1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	245W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	67A
Operating Junction Temperature (Maximum)		150 oC

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