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IXGT30N60B2 IGBT Transistor

The IXGT30N60B2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT30N60B2 transistor as follows.

Circuit diagram symbol of the IXGT30N60B2 transistor

IXGT30N60B2 Transistor Specification

Transistor Code IXGT30N60B2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO268
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 70A
Rise Time 82

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