APT100GT60JRDL IGBT Transistor

The APT100GT60JRDL is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT100GT60JRDL transistor as follows.

APT100GT60JRDL Transistor Specification

Transistor Code		APT100GT60JRDL
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		475
Rise Time		75

UXPython is not the creator or an official representative of the APT100GT60JRDL IGBT transistor. You can download the official APT100GT60JRDL IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXGX50N60B2D1 IGBT Transistor SKB02N120 IGBT Transistor IXGP24N60C4D1 IGBT Transistor IXBH16N170 IGBT Transistor TSG25N120CN IGBT Transistor SKM200GBD123D1S IGBT Transistor APT15GP60BDQ1G IGBT Transistor IGC109T120T6RH IGBT Transistor GA100TS60U IGBT Transistor SGS13N60UFD IGBT Transistor RJP6016JPE IGBT Transistor APTGF180DA60T IGBT Transistor IXXR110N65B4H1 IGBT Transistor MDI200-12A4 IGBT Transistor FD800R17KF6C_B2 IGBT Transistor GT20G102 IGBT Transistor TIG066SS IGBT Transistor STGB30H60DF IGBT Transistor APT50GN120B2 IGBT Transistor IKW40N65H5A IGBT Transistor