SSF2814EH2 MOSFET Transistor

The SSF2814EH2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSF2814EH2 transistor as follows.

SSF2814EH2 Transistor Specification

Transistor Code		SSF2814EH2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		142pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS

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