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AP9922GEO MOSFET Transistor

The AP9922GEO is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP9922GEO transistor as follows.

Circuit diagram symbol of the AP9922GEO transistor

AP9922GEO Transistor Specification

Transistor Code AP9922GEO
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSSOP8
Transistor SMD Code 9922GEO
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 6.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.016Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 295pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 1V

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