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AP2852GO MOSFET Transistor

The AP2852GO is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP2852GO transistor as follows.

Circuit diagram symbol of the AP2852GO transistor

AP2852GO Transistor Specification

Transistor Code AP2852GO
Transistor Type MOSFET
Control Channel Type NP-Channel
Package TSSOP8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 5.5(4.4)A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.032(0.05)Ohm
Power Dissipation (Maximum) PD 1.38W
Drain-Source Capacitance 146(180)pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS

AP2852GO MOSFET Transistor Overview

Key Electrical Characteristics of the AP2852GO MOSFET

Followings are the key electrical characteristics of the AP2852GO MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AP2852GO MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AP2852GO MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AP2852GO MOSFET transistor is 5.5(4.4)A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AP2852GO MOSFET transistor when the transistor is fully turned on is 0.032(0.05) Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AP2852GO MOSFET transistor can comfortably transfer into heat without breaking is 1.38W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the AP2852GO MOSFET transistor is 146(180)pF. This value influences to the switching speed of the AP2852GO MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AP2852GO MOSFET transistor is switched on is 6nS. This is the rate at which AP2852GO MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the AP2852GO MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of AP2852GO MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the AP2852GO MOSFET transistor. You can download the official AP2852GO MOSFET transistor datasheet to get more infromation about this transistor.

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