SQV120N10-3M8 MOSFET Transistor

The SQV120N10-3M8 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQV120N10-3M8 transistor as follows.

SQV120N10-3M8 Transistor Specification

Transistor Code		SQV120N10-3M8
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0038Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		3070pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		125nC

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