IRFSL11N50APBF MOSFET Transistor

The IRFSL11N50APBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFSL11N50APBF transistor as follows.

IRFSL11N50APBF Transistor Specification

Transistor Code		IRFSL11N50APBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		208pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		34nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		51nC

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