IPI084N06L3G MOSFET Transistor

The IPI084N06L3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI084N06L3G transistor as follows.

IPI084N06L3G Transistor Specification

Transistor Code		IPI084N06L3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Transistor SMD Code		084N06L
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0084Ohm
Power Dissipation (Maximum)	PD	79W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		2.2V

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