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SML1001R3HN MOSFET Transistor

The SML1001R3HN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1001R3HN transistor as follows.

Circuit diagram symbol of the SML1001R3HN transistor

SML1001R3HN Transistor Specification

Transistor Code SML1001R3HN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO258
Drain-Source Voltage (Maximum) VDS 1000V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.3Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 2950pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 130nC

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