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SML1001R3HN MOSFET Transistor

The SML1001R3HN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1001R3HN transistor as follows.

Circuit diagram symbol of the SML1001R3HN transistor

SML1001R3HN Transistor Specification

Transistor Code SML1001R3HN
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO258
Drain-Source Voltage (Maximum) VDS 1000V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.3Ohm
Power Dissipation (Maximum) PD 250W
Drain-Source Capacitance 2950pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 130nC

SML1001R3HN MOSFET Transistor Overview

The SML1001R3HN is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO258 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SML1001R3HN MOSFET

Followings are the key electrical characteristics of the SML1001R3HN MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SML1001R3HN MOSFET transistor is 1000V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SML1001R3HN MOSFET transistor is 9A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SML1001R3HN MOSFET transistor when the transistor is fully turned on is 1.3 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SML1001R3HN MOSFET transistor can comfortably transfer into heat without breaking is 250W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SML1001R3HN MOSFET transistor is 2950pF. This value influences to the switching speed of the SML1001R3HN MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SML1001R3HN MOSFET transistor is switched on is . This is the rate at which SML1001R3HN MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SML1001R3HN MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SML1001R3HN MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SML1001R3HN MOSFET transistor. You can download the official SML1001R3HN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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