APT1001R2HN MOSFET Transistor

The APT1001R2HN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT1001R2HN transistor as follows.

APT1001R2HN Transistor Specification

Transistor Code		APT1001R2HN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO258
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	250W
Operating Junction Temperature (Maximum)		150°C

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