SML1001H9 MOSFET Transistor

The SML1001H9 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SML1001H9 transistor as follows.

SML1001H9 Transistor Specification

Transistor Code		SML1001H9
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO258
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		3050pF
Operating Junction Temperature (Maximum)		150°C

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