SIA519EDJ MOSFET Transistor

The SIA519EDJ is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA519EDJ transistor as follows.

SIA519EDJ Transistor Specification

Transistor Code		SIA519EDJ
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		82pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		7.7nC

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