SIA533EDJ MOSFET Transistor

The SIA533EDJ is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA533EDJ transistor as follows.

SIA533EDJ Transistor Specification

Transistor Code		SIA533EDJ
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.034Ohm
Power Dissipation (Maximum)	PD	1.9W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		10nC

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