SIA923EDJ MOSFET Transistor

The SIA923EDJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA923EDJ transistor as follows.

SIA923EDJ Transistor Specification

Transistor Code		SIA923EDJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.054Ohm
Power Dissipation (Maximum)	PD	1.9W
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		16.3nC

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