SI8817DB MOSFET Transistor

The SI8817DB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8817DB transistor as follows.

SI8817DB Transistor Specification

Transistor Code		SI8817DB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		AF
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.076Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		1V

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