SI8415DB MOSFET Transistor

The SI8415DB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8415DB transistor as follows.

SI8415DB Transistor Specification

Transistor Code		SI8415DB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		8415
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	5.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.037Ohm
Power Dissipation (Maximum)	PD	1.47W
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		1V

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