SI8497DB MOSFET Transistor

The SI8497DB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8497DB transistor as follows.

SI8497DB Transistor Specification

Transistor Code		SI8497DB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		8497
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.053Ohm
Power Dissipation (Maximum)	PD	2.77W
Drain-Source Capacitance		121pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		1.1V

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