SI8475EDB MOSFET Transistor

The SI8475EDB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8475EDB transistor as follows.

SI8475EDB Transistor Specification

Transistor Code		SI8475EDB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		8475E
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.032Ohm
Power Dissipation (Maximum)	PD	1.1W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.5V

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