SI2319CDS MOSFET Transistor

The SI2319CDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2319CDS transistor as follows.

SI2319CDS Transistor Specification

Transistor Code		SI2319CDS
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-23
Transistor SMD Code		P7
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.077Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		76pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		2.5V

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