free stats

Home » Electronics » FET » AFN2304AS Transistor

AFN2304AS MOSFET Transistor

The AFN2304AS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN2304AS transistor as follows.

Circuit diagram symbol of the AFN2304AS transistor

AFN2304AS Transistor Specification

Transistor Code AFN2304AS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-23
Transistor SMD Code S4*
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.065Ohm
Power Dissipation (Maximum) PD 1.25W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 2nC

AFN2304AS MOSFET Transistor Overview

The AFN2304AS is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT-23 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the AFN2304AS MOSFET

Followings are the key electrical characteristics of the AFN2304AS MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AFN2304AS MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AFN2304AS MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AFN2304AS MOSFET transistor is 3.6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AFN2304AS MOSFET transistor when the transistor is fully turned on is 0.065 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AFN2304AS MOSFET transistor can comfortably transfer into heat without breaking is 1.25W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the AFN2304AS MOSFET transistor is 50pF. This value influences to the switching speed of the AFN2304AS MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AFN2304AS MOSFET transistor is switched on is 10nS. This is the rate at which AFN2304AS MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the AFN2304AS MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of AFN2304AS MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the AFN2304AS MOSFET transistor. You can download the official AFN2304AS MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

2N7002B 2N7002B MOSFET Transistor AFN2302AS AFN2302AS MOSFET Transistor AFN2302S AFN2302S MOSFET Transistor AFN2304 AFN2304 MOSFET Transistor AFN2304A AFN2304A MOSFET Transistor AFN2304S AFN2304S MOSFET Transistor AFN2306A AFN2306A MOSFET Transistor AFN2306AE AFN2306AE MOSFET Transistor AFN2308 AFN2308 MOSFET Transistor AFN2308A AFN2308A MOSFET Transistor AFN2312 AFN2312 MOSFET Transistor AFN2312A AFN2312A MOSFET Transistor AFN2318 AFN2318 MOSFET Transistor AFN2318A AFN2318A MOSFET Transistor AFN2324 AFN2324 MOSFET Transistor AFN2324A AFN2324A MOSFET Transistor AFN2330 AFN2330 MOSFET Transistor AFN2330A AFN2330A MOSFET Transistor AFN2336A AFN2336A MOSFET Transistor AFN2354 AFN2354 MOSFET Transistor