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SI2301CDS MOSFET Transistor

The SI2301CDS is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI2301CDS transistor as follows.

Circuit diagram symbol of the SI2301CDS transistor

SI2301CDS Transistor Specification

Transistor Code SI2301CDS
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT-23
Transistor SMD Code N1
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.112Ohm
Power Dissipation (Maximum) PD 0.86W
Drain-Source Capacitance 75pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 1V

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