RFT1P06E MOSFET Transistor

The RFT1P06E is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFT1P06E transistor as follows.

RFT1P06E Transistor Specification

Transistor Code		RFT1P06E
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	1.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.285Ohm
Power Dissipation (Maximum)	PD	1.1W
Operating Junction Temperature (Maximum)		150°C

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