ZXMN6A09G MOSFET Transistor

The ZXMN6A09G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN6A09G transistor as follows.

ZXMN6A09G Transistor Specification

Transistor Code		ZXMN6A09G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	3.9W
Drain-Source Capacitance		1407pF
Total Gate Charge		24.2nC

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